ANISOTROPIC ETCHING OF SILICON AT HIGH-PRESSURE

被引：12

作者：

ABBOTT, AP ^{[1
]}

CAMPBELL, SA ^{[1
]}

SATHERLEY, J ^{[1
]}

SCHIFFRIN, DJ ^{[1
]}

机构：

[1] UNIV PORTSMOUTH,DEPT CHEM,PORTSMOUTH PO1 2DT,ENGLAND

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1993年 / 348卷 / 1-2期

关键词：

D O I：

10.1016/0022-0728(93)80154-A

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

[No abstract available]

引用

页码：473 / 479

页数：7

共 17 条

[11] ELLIPSOMETRIC STUDY OF ORIENTATION-DEPENDENT ETCHING OF SILICON IN AQUEOUS KOH [J].

PALIK, ED ;

BERMUDEZ, VM ;

GLEMBOCKI, OJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) :871-884

[12] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J].

PEARTON, SJ ;

CORBETT, JW ;

SHI, TS .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03) :153-195

[13] (100) SILICON ETCH-RATE DEPENDENCE ON BORON CONCENTRATION IN ETHYLENEDIAMINE-PYROCATECHOL-WATER SOLUTIONS [J].

RALEY, NF ;

SUGIYAMA, Y ;

VANDUZER, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (01) :161-171

[14] HYDROGEN DIFFUSION AND PASSIVATION PROCESSES IN P-TYPE AND N-TYPE CRYSTALLINE SILICON [J].

RIZK, R ;

DEMIERRY, P ;

BALLUTAUD, D ;

AUCOUTURIER, M ;

MATHIOT, D .

PHYSICAL REVIEW B, 1991, 44 (12) :6141-6151

[15]

SCHNAKENBERG U, 1990, SENSOR ACTUAT A-PHYS, V21, P1031

[16] ANISOTROPIC ETCHING OF CRYSTALLINE SILICON IN ALKALINE-SOLUTIONS .1. ORIENTATION DEPENDENCE AND BEHAVIOR OF PASSIVATION LAYERS [J].

SEIDEL, H ;

CSEPREGI, L ;

HEUBERGER, A ;

BAUMGARTEL, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (11) :3612-3626

[17] ON THE PERMEATION OF HYDROGEN AND HELIUM IN SINGLE CRYSTAL SILICON AND GERMANIUM AT ELEVATED TEMPERATURES [J].

VANWIERINGEN, A ;

WARMOLTZ, N .

PHYSICA, 1956, 22 (10) :849-865

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