(100) SILICON ETCH-RATE DEPENDENCE ON BORON CONCENTRATION IN ETHYLENEDIAMINE-PYROCATECHOL-WATER SOLUTIONS

被引：84

作者：

RALEY, NF ^{[1
]}

SUGIYAMA, Y ^{[1
]}

VANDUZER, T ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 01期

关键词：

D O I：

10.1149/1.2115500

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：161 / 171

页数：11

共 39 条

[1] A STUDY OF ELECTRON PENETRATION IN SOLIDS USING A DIRECT MONTE-CARLO APPROACH [J].

ADESIDA, I ;

SHIMIZU, R ;

EVERHART, TE .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5962-5969

[2] ELECTRICAL CHARACTERISTICS OF SPUTTERING-INDUCED DEFECTS IN TYPE-N SILICON [J].

ANDERSSON, LP ;

EVWARAYE, AO .

VACUUM, 1978, 28 (01) :5-7

[3] INTERFACE REACTION OF B2O3-SI SYSTEM AND BORON DIFFUSION INTO SILICON [J].

ARAI, E ;

TERUNUMA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) :980-987

[4] STAIN FILMS ON SILICON [J].

ARCHER, RJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :104-110

[5]

BARTELT JL, 1982, ELECTROCHEMICAL SOC, P454

[6] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J].

BASSOUS, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1178-1185

[7]

BAUMAN RP, 1962, ABSORPTION SPECTROSC, P14

[8] AUGER-RECOMBINATION IN SI [J].

BECK, JD ;

CONRADT, R .

SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95

[9] INVESTIGATION OF CHEMICAL PROPERTIES OF STAIN FILMS ON SILICON BY MEANS OF INFRARED SPECTROSCOPY [J].

BECKMANN, KH .

SURFACE SCIENCE, 1965, 3 (04) :314-&

[10] ETHYLENE DIAMINE-PYROCATECHOL-WATER MIXTURE SHOWS ETCHING ANOMALY IN BORON-DOPED SILICON [J].

BOHG, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :401-&

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