(100) SILICON ETCH-RATE DEPENDENCE ON BORON CONCENTRATION IN ETHYLENEDIAMINE-PYROCATECHOL-WATER SOLUTIONS

被引：84

作者：

RALEY, NF ^{[1
]}

SUGIYAMA, Y ^{[1
]}

VANDUZER, T ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 01期

关键词：

D O I：

10.1149/1.2115500

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：161 / 171

页数：11

共 39 条

[21] DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON [J].

HORN, FH .

PHYSICAL REVIEW, 1955, 97 (06) :1521-1525

[22] SCHOTTKY DIODES AND OTHER DEVICES ON THIN SILICON MEMBRANES [J].

HUANG, CL ;

VANDUZER, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) :579-583

[23] MINIATURE CANTILEVER BEAMS FABRICATED BY ANISOTROPIC ETCHING OF SILICON [J].

JOLLY, RD ;

MULLER, RS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2750-2754

[24] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

[25] STUDY OF THE ETCH-STOP MECHANISM IN SILICON [J].

PALIK, ED ;

FAUST, JW ;

GRAY, HF ;

GREENE, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2051-2059

[26] A RAMAN-STUDY OF ETCHING SILICON IN AQUEOUS KOH [J].

PALIK, ED ;

GRAY, HF ;

KLEIN, PB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) :956-959

[27] MICROMECHANICAL ACCELEROMETER INTEGRATED WITH MOS DETECTION CIRCUITRY [J].

PETERSEN, KE ;

SHARTEL, A ;

RALEY, NF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :23-27

[28] CONTROLLED ETCHING OF SILICON IN CATALYZED ETHYLENEDIAMINE-PYROCATECHOL-WATER SOLUTIONS [J].

REISMAN, A ;

BERKENBLIT, M ;

CHAN, SA ;

KAUFMAN, FB ;

GREEN, DC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1406-1415

[29]

Roark R. J., 1975, FORMULAS STRESS STRA, P89

[30]

ROCHOW EG, 1946, CHEM SILICONES, P6

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