PREPARATION OF SRTIO3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Strontium titanate (SrTiO3) thin films were grown by means of the metalorganic chemical vapor deposition (MOCVD) method using dipivaloylmethane (DPM) chelate of strontium (II) [Sr(DPM)(2)] and titanium tetraisopropoxide as source materials. In the preliminary experiments, the deposition behaviors of SrO and TiO2 films from respective sources were examined separately. As-grown perovskite single-phase SrTiO3 films were obtained at the substrate temperature of 750 degrees C under the reduced pressure of 530 Pa. The films deposited on the MgO (100) substrate showed high (100) orientation and good optical transmission spectra, with the refractive index of 2.35. The dielectric constant and dielectric loss were 150-250 and 0.01-0.04, respectively. The leakage current density of the 0.38 mu m-thick films was approximately 3 x 10(-8) A/cm(2) at 3 V.