NUMERICAL-ANALYSIS ON FIELD-EMISSION FOR THE EFFECTS OF THE GATE INSULATORS

被引：12

作者：

AHN, HY ^{[1
]}

LEE, CG ^{[1
]}

LEE, JD ^{[1
]}

机构：

[1] SEOUL NATL UNIV,DEPT ELECTR ENGN,SEOUL 151742,SOUTH KOREA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.588350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A program to solve the Poisson equation by a finite element method has been developed to simulate accurately the distributions of potential and electric field of the field emission microtriode. The emission current can be calculated by this method more accurately and efficiently than the finite difference method. Moreover, we can consider the effect of a gate insulator structure that cannot be treated by boundary element method. The optimal gate insulator is investigated from the viewpoint of the multilayer structure and the edge shape of the insulator. The emission current can be improved more than 85% using a gate insulator with a vertical edge shape and double-layer structure with different permittivities.

引用

页码：540 / 544

页数：5

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