LOW-TEMPERATURE GROWTH OF EPITAXIAL LINBO3 FILMS ON SAPPHIRE(0001) SUBSTRATES USING PULSED-LASER DEPOSITION

被引:58
作者
LEE, SH
SONG, TK
NOH, TW
LEE, JH
机构
[1] Seoul Natl Univ, Seoul
关键词
D O I
10.1063/1.115486
中图分类号
O59 [应用物理学];
学科分类号
摘要
LiNbO3 films have been studied with various deposition techniques, including rf sputtering, molecular beam epitaxy, liquid phase epitaxy, and sol-gel process. Through pulsed laser deposition (PLD), high quality epitaxial LiNbO3 films were fabricated. High quality thin films were grown on c-cut sapphire substrates from a LiNbO3 single-crystal target. Reported are efforts to obtain epitaxial LiNbO3 thin films at a low deposition temperature of 400-450 °C. The oxygen pressure during the deposition was found to be an important parameter which influences crystalline orientations.
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页码:43 / 45
页数:3
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