UNIFORM SELECTIVE-AREA GROWTH OF GAAS AND GAINP BY LOW-TEMPERATURE CHEMICAL BEAM EPITAXY

Selective area chemical beam epitaxy (CBE) has been investigated for GaAs and GaInP materials. Three topics are considered in this work: the critical temperature for selective growth, the compositional variation of GaInP on patterned surfaces and the topology of the localized epitaxy. The major results of this study are: (i) the decrease of the growth rate appears to lower drastically the critical selective growth temperature so that GaAs and GaInP can be selectively grown under the optimized temperature conditions defined for CBE, (ii) the composition of the GaInP alloy, analysed by 300 K photoluminescence, is found to be uniform in the selectively grown stripes compared to the unpatterned substrate, (iii) growth conditions have been established to selectively grow GaAs stripes limited by vertical sidewalls.