MEASUREMENT OF THE LOW-CURRENT BASE AND EMITTER RESISTANCES OF BIPOLAR-TRANSISTORS

被引：16

作者：

NEUGROSCHEL, A

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期

关键词：

D O I：

10.1109/T-ED.1987.23001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：817 / 822

页数：6

共 8 条

[1] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J].

BOWLER, DL ;

LINDHOLM, FA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :257-263

[2] TWO-DIMENSIONAL DEVICE SIMULATION PROGRAM - 2DP [J].

GAUR, SP ;

HABITZ, PA ;

PARK, YJ ;

COOK, RK ;

HUANG, YS ;

WAGNER, LF .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1985, 29 (03) :242-251

[3]

Getreu I., 1976, MODELING BIPOLAR TRA

[4] METHOD FOR DETERMINING THE EMITTER AND BASE SERIES RESISTANCES OF BIPOLAR-TRANSISTORS [J].

NING, TH ;

TANG, DD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) :409-412

[5] CHARACTERIZATION OF NON-OHMIC BEHAVIOR OF EMITTER CONTACTS OF BIPOLAR-TRANSISTORS [J].

RICCO, B ;

STORK, JMC ;

ARIENZO, M .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) :221-223

[6] CHARACTERIZATION AND MEASUREMENT OF BASE AND EMITTER RESISTANCES OF BIPOLAR TRANSISTORS [J].

SANSEN, WMC ;

MEYER, RG .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (06) :492-&

[7] DETERMINATION OF A SMALL-SIGNAL MODEL FOR ION-IMPLANTED MICROWAVE TRANSISTORS [J].

SCHUTTAINE, JE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) :750-759

[8]

SEARLE CL, 1964, ELEMENTARY CIRCUIT P

← 1 →