UNIFORMITY OF PHOSPHORUS EMITTER CONCENTRATION FOR SHALLOW DIFFUSED TRANSISTORS

被引：4

作者：

PAREKH, PC

机构：

来源：

关键词：

D O I：

10.1149/1.2404155

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：173 / &

共 14 条

[1]

BUHANAN D, 1969, IEEE T ELECTRON DEVI, VED16, P117

[2] ELLIPSOMETRIC INVESTIGATIONS OF BORON-RICH LAYERS ON SILICON [J].

BUSEN, KM ;

FITZGIBBONS, WA ;

TSANG, WK .

[3] STRAIN EFFECTS AROUND PLANAR DIFFUSED STRUCTURES [J].

FAIRFIELD, JM ;

SCHWUTTKE, GH .

[4] PHOSPHORUS DIFFUSION INTO SILICON USING PHOSPHINE [J].

HEYNES, MSR ;

VANLOON, PGG .

[5]

HEYNES MSR, 1967, ELECTROCHEM TECHNOL, V5, P25

[6]

HEYNES MSR, 1967, ELECTROCHEM TECHNOL, V5, P464

[7] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[8]

JUNGBLUTH ED, 1970, 253RNP PAP EL SOC M, P4

KESPERIS, JS .

[10] COOPERATIVE DIFFUSION EFFECT [J].

LAWRENCE, JE .