EFFECTS OF STRESS ON METAL-OXIDE-SEMICONDUCTOR STRUCTURES

被引：15

作者：

FONASH, SJ ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

关键词：

D O I：

10.1063/1.1662009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4607 / 4615

页数：9

共 23 条

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