DIFFUSION OF ELECTRONS AND HOLES IN SEMICONDUCTORS UNDER CONDITIONS OF GRADIENTS OF LATTICE TEMPERATURE AND CARRIER CONCENTRATION

被引：13

作者：

WAUTELET, M

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 06期

关键词：

D O I：

10.1088/0022-3719/14/6/013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：881 / 889

页数：9

共 20 条

[1] PICOSECOND ELLIPSOMETRY OF TRANSIENT ELECTRON-HOLE PLASMAS IN GERMANIUM [J].

AUSTON, DH ;

SHANK, CV .

PHYSICAL REVIEW LETTERS, 1974, 32 (20) :1120-1123

[2] THEORY OF ELECTRON-HOLE LIQUID IN SEMICONDUCTORS [J].

BENI, G ;

RICE, TM .

PHYSICAL REVIEW B, 1978, 18 (02) :768-785

[3] ELECTRON-HOLE LIQUIDS IN SEMICONDUCTORS [J].

BRINKMAN, WF ;

RICE, TM .

PHYSICAL REVIEW B, 1973, 7 (04) :1508-1523

[4] ENERGY-GAP NARROWING AND STATE FILLING IN SEMICONDUCTORS UNDER INTENSE LASER IRRADIATION [J].

FERRY, DK .

PHYSICAL REVIEW B, 1978, 18 (12) :7033-7037

[5] EXPLICIT LOCAL EXCHANGE-CORRELATION POTENTIALS [J].

HEDIN, L ;

LUNDQVIS.BI .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :2064-&

[6] EFFECT OF ELECTRON-HOLE PAIRS ON PHONON FREQUENCIES IN SI RELATED TO TEMPERATURE-DEPENDENCE OF BAND-GAPS [J].

HEINE, V ;

VANVECHTEN, JA .

PHYSICAL REVIEW B, 1976, 13 (04) :1622-1626

[7] THEORY OF ISOTOPE-SHIFT FOR ZERO-PHONON OPTICAL-TRANSITIONS AT TRAPS IN SEMICONDUCTORS [J].

HEINE, V ;

HENRY, CH .

PHYSICAL REVIEW B, 1975, 11 (10) :3795-3803

[8] EFFECT OF ELECTRON INTERACTION ON BAND-GAP OF EXTRINSIC SEMICONDUCTORS [J].

INKSON, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (07) :1177-1183

[9] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON [J].

LO, HW ;

COMPAAN, A .

PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1604-1607

[10]

SAYHALASZ GA, 1980, PHYS LETT A, V77, P375

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