ORIGIN OF THE REDUCTION OF LIGHT-INDUCED-CHANGES IN PLASMA-DEPOSITED HYDROGENATED AMORPHOUS-SILICON PREPARED UNDER VISIBLE-LIGHT ILLUMINATION

被引：3

作者：

SAKATA, I

YAMANAKA, M

HAYASHI, Y

机构：

[1] Device Synthesis Section, Electrotechnical Laboratory, Tsukuba, Ibaraki, 305

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 3A期

关键词：

A-SI-H; LIGHT-INDUCED CHANGES;

D O I：

10.1143/JJAP.30.L326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental studies have been carried out to clarify the origin of the reduction of light-induced changes in plasma-deposited hydrogenated amorphous silicon prepared under visible-light illumination (referred to as illuminated GD a-Si:H in this paper). The changes are smaller in the illuminated GD sample than in the a-Si:H sample deposited in the same run without the illumination even when the content and bonding mode of hydrogen are almost the same in both samples. This implies that the possible reduction of latent sites for the changes by the illumination is an essential origin of the observed reduction.

引用

页码：L326 / L329

页数：4

共 13 条

[1]

ADLER D, 1981, J PHYS S, V10

[2] CHARGED DANGLING BONDS - KEY TO ELECTRONIC TRANSPORT, RECOMBINATION AND METASTABILITY IN HYDROGENATED AMORPHOUS-SILICON [J].