TRANSIENT PHOTOCONDUCTIVITY IN GE-BE DUE TO BE+ FORMATION

被引:4
作者
HAEGEL, NM [1 ]
BEEMAN, JW [1 ]
LUKE, PN [1 ]
HALLER, EE [1 ]
机构
[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1989年 / 39卷 / 06期
关键词
D O I
10.1103/PhysRevB.39.3677
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3677 / 3682
页数:6
相关论文
共 27 条
  • [1] TEMPERATURE-DEPENDENCE OF RESPONSIVITY IN CLOSELY COMPENSATED EXTRINSIC INFRARED DETECTORS
    ALEXANDER, DH
    BARON, R
    STAFSUDD, OM
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 71 - 77
  • [2] ANSELM AI, 1953, ZH EKSP TEOR FIZ+, V24, P83
  • [3] GERMER TA, 1987, J APPL PHYS, V60, P1055
  • [4] GERSHENZON EI, 1971, JETP LETT-USSR, V14, P185
  • [5] GERSHENZON EM, 1973, SOV PHYS SEMICOND+, V7, P746
  • [6] PERFORMANCE AND MATERIALS ASPECTS OF GE-BE PHOTOCONDUCTORS
    HAEGEL, NM
    HALLER, EE
    LUKE, PN
    [J]. INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1983, 4 (06): : 945 - 954
  • [7] TRANSIENT-RESPONSE OF GE-BE AND GE-ZN FIR PHOTOCONDUCTORS UNDER LOW BACKGROUND PHOTON FLUX CONDITIONS
    HAEGEL, NM
    HALLER, EE
    [J]. INFRARED PHYSICS, 1986, 26 (04): : 247 - 261
  • [8] HAEGEL NM, 1986, 3RD INT S SOC PHOT I, V659, P188
  • [9] HAEGEL NM, 1988, J APPL PHYS, V64, P5123
  • [10] LARGE-STRAIN DEPENDENCE OF ACCEPTOR BINDING ENERGY IN GERMANIUM
    HALL, JJ
    [J]. PHYSICAL REVIEW, 1962, 128 (01): : 68 - &