KINETICS OF H-2 PASSIVATION OF PB CENTERS AT THE (111) SI-SIO2 INTERFACE

被引：223

作者：

BROWER, KL

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.38.9657

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9657 / 9666

页数：10

共 40 条

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