IMAGING OF DEEP LEVEL DOMAINS IN SEMIINSULATING GAAS BY VOLTAGE CONTRAST

被引:10
作者
JOHNSON, DA [1 ]
MYHAJLENKO, S [1 ]
EDWARDS, JL [1 ]
MARACAS, GN [1 ]
ROEDEL, RJ [1 ]
GORONKIN, H [1 ]
机构
[1] MOTOROLA INC,CTR COMPOUND SEMICOND TECHNOL,PHOENIX,AZ 85008
关键词
D O I
10.1063/1.98768
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1152 / 1154
页数:3
相关论文
共 7 条
[1]  
Goronkin H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P182
[2]   EXPERIMENTAL EVALUATION OF LOW-FREQUENCY OSCILLATIONS IN UNDOPED GAAS TO PROBE DEEP LEVEL PARAMETERS [J].
MARACAS, GN ;
JOHNSON, DA ;
GORONKIN, H .
APPLIED PHYSICS LETTERS, 1985, 46 (03) :305-307
[3]  
NORTHROP DC, 1963, SOLID STATE ELECTRON, V7, P17
[4]   LOW FREQUENCY OSCILLATIONS IN SEMI-INSULATING GALLIUM ARSENIDE [J].
SACKS, HK ;
MILNES, AG .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1970, 28 (06) :565-+
[5]  
SHEU TC, 1986, MATERIALS RES SOC C
[6]  
WAKEFIELD B, 1985, I PHYS C SER, V76, P373
[7]   SPATIAL-DISTRIBUTION OF 0.68-EV EMISSION FROM UNDOPED SEMI-INSULATING GALLIUM-ARSENIDE REVEALED BY HIGH-RESOLUTION LUMINESCENCE IMAGING [J].
WARWICK, CA ;
BROWN, GT .
APPLIED PHYSICS LETTERS, 1985, 46 (06) :574-576