SIDEGATING EFFECT OF GAAS-MESFETS AND LEAKAGE CURRENT IN A SEMI-INSULATING GAAS SUBSTRATE

被引：18

作者：

YI, L

DUTTON, RW

DEAL, MD

机构：

[1] Center for Integrated Systems, Stanford University, Stanford

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 11期

关键词：

D O I：

10.1109/55.63014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A series of measurements was made on test structures for studying the sidegating effect of GaAs MESFET’s. The results show that the small portion of the gate of a MESFET that is in direct contact with the semi-insulating substrate plays an important role in causing the observed rapid rise of leakage current and in enhancing the sidegating effect. © 1990 IEEE

引用

页码：505 / 507

页数：3

共 8 条

[1]

GOTO N, 1988, 5TH P C SEM 3 5 MAT, P253

[2]

INOKUCHI K, 1987, P IEEE GAAS IC S, P117

[3] TEMPERATURE-DEPENDENCE OF BACKGATING EFFECT IN GAAS INTEGRATED-CIRCUITS [J].