THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM

[11] THE SOLID STATE [J]. ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1954, 5 : 199 - 218

[12] BURSTEIN E, PHOTOCONDUCTIVITY C

[13] BURSTEIN E, 1955, ADV ELECTRONICS ELEC, V7

[14] INFRARED LATTICE ABSORPTION BANDS IN GERMANIUM, SILICON, AND DIAMOND [J]. PHYSICAL REVIEW, 1954, 93 (04): : 674 - 678

[15] HALL EFFECT AND DENSITY OF STATES IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1195 - 1198

[16] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[17] DASH WC, 1955, PHYS REV, V98, P1192

[18] ANISOTROPY OF CYCLOTRON RESONANCE OF HOLES IN GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (02): : 557 - 558

[19] EFFECTIVE MASSES OF ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 222 - 223

[20] EFFECTIVE MASSES OF HOLES IN SILICON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 223 - 224

[11] THE SOLID STATE [J]. ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1954, 5 : 199 - 218

[12] BURSTEIN E, PHOTOCONDUCTIVITY C

[13] BURSTEIN E, 1955, ADV ELECTRONICS ELEC, V7

[14] INFRARED LATTICE ABSORPTION BANDS IN GERMANIUM, SILICON, AND DIAMOND [J]. PHYSICAL REVIEW, 1954, 93 (04): : 674 - 678

[15] HALL EFFECT AND DENSITY OF STATES IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1195 - 1198

[16] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[17] DASH WC, 1955, PHYS REV, V98, P1192

[18] ANISOTROPY OF CYCLOTRON RESONANCE OF HOLES IN GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (02): : 557 - 558

[19] EFFECTIVE MASSES OF ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 222 - 223

[20] EFFECTIVE MASSES OF HOLES IN SILICON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 223 - 224