REDUCTION OF SECONDARY DEFECT DENSITY BY C-IMPLANT AND B-IMPLANT IN GEXSI1-X LAYERS FORMED BY HIGH-DOSE GE IMPLANTATION IN (100) SI

被引：36

作者：

LOMBARDO, S ^{[1
]}

PRIOLO, F ^{[1
]}

CAMPISANO, SU ^{[1
]}

LAGOMARSINO, S ^{[1
]}

机构：

[1] CNR,IST ELETTRON STATO SOLIDO,I-00156 ROME,ITALY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期

关键词：

D O I：

10.1063/1.109409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(100) oriented Si substrates were implanted with 70 keV Ge ions at a dose of 3 X 10(16) cm-2, corresponding to a Ge peak concentration of almost-equal-to 15 at. %. Annealing at 1100-degrees-C for 10 s forms a large density of secondary defects (dislocation loops). A 30 keV C implant at a dose of 3 X 10(15) cm-2 on the Ge implanted samples suppresses the formation of secondary defects after the annealing. In GexSi1-x layers implanted with 30 keV B at a dose of 2.5 X 10(15) cm-2, a dense dislocation network after annealing is present. Therefore C is much more effective in the suppression of secondary defects than B. In addition, it is shown that good epitaxial quality can be obtained in the heavily B doped GexSi1-x, layers amorphizing a 2 mum thick surface layer by high energy Si implants prior to annealing.

引用

页码：2335 / 2337

页数：3

共 13 条

[1] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].