DIRECT PATTERNING OF THE CURRENT CONFINEMENT STRUCTURE FOR P-TYPE COLUMN-III NITRIDES BY LOW-ENERGY-ELECTRON BEAM IRRADIATION TREATMENT

被引：17

作者：

INAMORI, M ^{[1
]}

SAKAI, H ^{[1
]}

TANAKA, T ^{[1
]}

AMANO, H ^{[1
]}

AKASAKI, I ^{[1
]}

机构：

[1] PIONEER ELECTR CORP,DEPT DEVICES & MAT,TSURUGA,SAITAMA 35002,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

GAN-MG; ALGAN-MG; PARTIAL LEEBI TREATMENT; DIRECT PATTERNING; CURRENT CONFINEMENT STRUCTURE; UV BLUE LIGHT-EMITTING DEVICE;

D O I：

10.1143/JJAP.34.1190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Partial low-energy electron beam irradiation (LEEBI) treatment was used to fabricate UV/blue light-emitting devices based on column-III nitrides having a directly patterned current confinement structure. The newly developed devices show very low leakage reverse current, stable operation at high pulsed current injection, and strong and narrow violet emission at room temperature.

引用

页码：1190 / 1193

页数：4

共 9 条

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