RAPID AUTOMATIC COMPENSATION FOR CHARGING EFFECTS DURING THE SIMS DEPTH PROFILING OF SEMICONDUCTORS

被引：7

作者：

DOWSETT, MG

MCPHAIL, DS

PARKER, EHC

FOX, H

机构：

[1] City of London Polytechnic, London, Engl, City of London Polytechnic, London, Engl

来源：

关键词：

D O I：

10.1016/0042-207X(86)90139-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：913 / 916

页数：4

共 8 条

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[2]

DOWSETT MG, 1986, 5 P SIMS, P176

[3]

DOWSETT MG, 1986, 5 P SIMS, P179

[4]

MCPHAIL DS, 1986, 5 P SIMS, P343

[5]

MCPHAIL DS, UNPUB J APPL PHYS

WITTMAACK, K ;

DOWSETT, MG ;

CLEGG, JB .

INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1982, 43 (01) :31-39

WITTMAACK, K .

[8] MECHANISM OF CLUSTER EMISSION IN SPUTTERING [J].

WITTMAACK, K .