THEORETICAL CONTRIBUTION TO THE STUDY OF AN ALPHA-SI/GE0.2SI0.8(111) INTERFACIAL STRUCTURE

被引:11
作者
MASRI, P
机构
来源
PHYSICAL REVIEW B | 1989年 / 39卷 / 14期
关键词
D O I
10.1103/PhysRevB.39.10384
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:10384 / 10386
页数:3
相关论文
共 15 条
[1]  
AKIMOTO K, 1987, SURF SCI, V183, pL297, DOI 10.1016/S0039-6028(87)80329-1
[2]   VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE [J].
ALBEN, R ;
WEAIRE, D ;
SMITH, JE ;
BRODSKY, MH .
PHYSICAL REVIEW B, 1975, 11 (06) :2271-2296
[3]   TUNNELING MICROSCOPY AND SPECTROSCOPY OF SEMICONDUCTOR SURFACES AND INTERFACES [J].
BARATOFF, A ;
BINNIG, G ;
FUCHS, H ;
SALVAN, F ;
STOLL, E .
SURFACE SCIENCE, 1986, 168 (1-3) :734-743
[4]   SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES [J].
BAUER, RS ;
MIKKELSEN, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :491-497
[5]   DENSITIES OF AMORPHOUS SI FILMS BY NUCLEAR BACKSCATTERING [J].
BRODSKY, MH ;
KAPLAN, D ;
ZIEGLER, JF .
APPLIED PHYSICS LETTERS, 1972, 21 (07) :305-&
[6]   STRUCTURAL AND ELECTRONIC-PROPERTIES OF COSI2 EPITAXIALLY GROWN ON SI(111) [J].
DERRIEN, J .
SURFACE SCIENCE, 1986, 168 (1-3) :171-183
[7]   LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J].
DISMUKES, JP ;
PAFF, RJ ;
EKSTROM, L .
JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) :3021-&
[8]   AUGER DEPTH PROFILING OF AU-ALXGA1-XAS INTERFACES AND LPE ALXGA1-XAS-GAAS HETEROJUNCTIONS [J].
GARNER, CM ;
SHEN, YD ;
KIM, JS ;
PEARSON, GL ;
SPICER, WE ;
HARRIS, JS ;
EDWALL, DD ;
SAHAI, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :985-988
[9]   RHEED STUDIES OF HETEROJUNCTION AND QUANTUM-WELL FORMATION DURING MBE GROWTH - FROM MULTIPLE-SCATTERING TO BAND OFFSETS [J].
JOYCE, BA ;
DOBSON, PJ ;
NEAVE, JH ;
WOODBRIDGE, K ;
ZHANG, J ;
LARSEN, PK ;
BOLGER, B .
SURFACE SCIENCE, 1986, 168 (1-3) :423-438
[10]  
KITTEL C, 1968, INTRO SOLID STATE PH, P119