STRAIN AND DEFECT DENSITIES IN SI/SI1-XGEX HETEROSTRUCTURES INVESTIGATED BY ION-SCATTERING AND X-RAY-DIFFRACTION

被引：6

作者：

HOLLANDER, B ^{[1
]}

MANTL, S ^{[1
]}

STRITZKER, B ^{[1
]}

SCHAFFLER, F ^{[1
]}

HERZOG, HJ ^{[1
]}

KASPER, E ^{[1
]}

机构：

[1] DAIMLER BENZ FORSCHUNGSINST, W-7900 ULM, GERMANY

来源：

APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(91)90216-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

MBE-grown Si/Si1-xGe(x) heterostructures on (100) Si have been characterized by Rutherford backscattering spectroscopy (RBS), ion channeling and X-ray diffraction to investigate defect densities and tetragonal lattice distortion. Critical layer thickness and relaxation of strain by formation of misfit dislocations are strongly dependent on the growth temperature. A Si0.67Ge0.33 layer with a thickness of 2000 angstrom is found to be still fully strained at a growth temperature of 450-degrees-C, whereas the same layer grown at 550-degrees-C shows considerable strain relaxation by dislocations. To obtain better depth resolution than with conventional RBS, medium energy ion scattering (MEIS) experiments have been performed on Si/Ge superlattices with layer thickness of 10-40 angstrom. A position-sensitive toroidal electrostatic analyser was employed to detect the backscattered ions simultaneously over an angular range of 30-degrees with an energy resolution of 1 keV FWHM for 250 keV He ions, corresponding to a depth resolution of about 10 angstrom.

引用

页码：450 / 455

页数：6

共 18 条

[11] DETERMINATION OF THE CRITICAL LAYER THICKNESS OF SI1-XGEX/SI HETEROSTRUCTURES BY DIRECT OBSERVATION OF MISFIT DISLOCATIONS [J].