共 18 条
CONTINUOUS GROWTH OF HIGH-PURITY INP-INGAAS ON INP SUBSTRATE BY VAPOR-PHASE EPITAXY
被引:11
作者:

SUSA, N
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YAMAUCHI, Y
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KANBE, H
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h-index: 0
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D O I:
10.1143/JJAP.20.L253
中图分类号:
O59 [应用物理学];
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页码:L253 / L256
页数:4
相关论文
共 18 条
- [1] TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L277 - L280ANDO, H论文数: 0 引用数: 0 h-index: 0机构: FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPANKANBE, H论文数: 0 引用数: 0 h-index: 0机构: FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPANITO, M论文数: 0 引用数: 0 h-index: 0机构: FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPANKANEDA, T论文数: 0 引用数: 0 h-index: 0机构: FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
- [2] THERMAL-EXPANSION PARAMETERS OF SOME GAXIN1-XASYP1-X ALLOYS[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 100 - 102BISARO, R论文数: 0 引用数: 0 h-index: 0机构: Laboratoire Central de Recherches, Thomson-C.S.FMERENDA, P论文数: 0 引用数: 0 h-index: 0机构: Laboratoire Central de Recherches, Thomson-C.S.FPEARSALL, TP论文数: 0 引用数: 0 h-index: 0机构: Laboratoire Central de Recherches, Thomson-C.S.F
- [3] INGAASP-INGAAS HETEROJUNCTION P-I-N DETECTORS WITH LOW DARK CURRENT AND SMALL CAPACITANCE FOR 1.3-1.6-MU-M FIBER OPTIC SYSTEMS[J]. ELECTRONICS LETTERS, 1980, 16 (23) : 893 - 895CAPASSO, F论文数: 0 引用数: 0 h-index: 0机构: BELL TEL LABS INC,READING,PA 19604 BELL TEL LABS INC,READING,PA 19604LOGAN, RA论文数: 0 引用数: 0 h-index: 0机构: BELL TEL LABS INC,READING,PA 19604 BELL TEL LABS INC,READING,PA 19604HUTCHINSON, A论文数: 0 引用数: 0 h-index: 0机构: BELL TEL LABS INC,READING,PA 19604 BELL TEL LABS INC,READING,PA 19604MANCHON, DD论文数: 0 引用数: 0 h-index: 0机构: BELL TEL LABS INC,READING,PA 19604 BELL TEL LABS INC,READING,PA 19604
- [4] FABRICATION OF COMPLETELY OH-FREE VAD FIBER[J]. ELECTRONICS LETTERS, 1980, 16 (18) : 699 - 700HANAWA, F论文数: 0 引用数: 0 h-index: 0SUDO, S论文数: 0 引用数: 0 h-index: 0KAWACHI, M论文数: 0 引用数: 0 h-index: 0NAKAHARA, M论文数: 0 引用数: 0 h-index: 0
- [5] OPTOELECTRONIC MATRIX SWITCH USING HETEROJUNCTION SWITCHING PHOTO-DIODES[J]. ELECTRONICS LETTERS, 1981, 17 (04) : 150 - 151HARA, EH论文数: 0 引用数: 0 h-index: 0MACHIDA, S论文数: 0 引用数: 0 h-index: 0IKEDA, M论文数: 0 引用数: 0 h-index: 0KANBE, H论文数: 0 引用数: 0 h-index: 0KIMURA, T论文数: 0 引用数: 0 h-index: 0
- [6] OPTICAL FREQUENCIES AND DIELECTRIC CONSTANTS OF INP[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (15) : 1057 - &HILSUM, C论文数: 0 引用数: 0 h-index: 0FRAY, S论文数: 0 引用数: 0 h-index: 0SMITH, C论文数: 0 引用数: 0 h-index: 0
- [7] ETCHING CHARACTERISTICS OF DEFECTS IN THE INGAASP-INP LPE LAYERS[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) : 2273 - 2277KOTANI, T论文数: 0 引用数: 0 h-index: 0KOMIYA, S论文数: 0 引用数: 0 h-index: 0NAKAI, S论文数: 0 引用数: 0 h-index: 0YAMAOKA, Y论文数: 0 引用数: 0 h-index: 0
- [8] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 295 - 297KROEMER, H论文数: 0 引用数: 0 h-index: 0机构: ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360 ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360CHIEN, WY论文数: 0 引用数: 0 h-index: 0机构: ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360 ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360HARRIS, JS论文数: 0 引用数: 0 h-index: 0机构: ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360 ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360EDWALL, DD论文数: 0 引用数: 0 h-index: 0机构: ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360 ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
- [9] VAPOR-PHASE GROWTH OF INGAASP-INP DH STRUCTURES BY THE DUAL-GROWTH-CHAMBER METHOD[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L113 - L116MIZUTANI, T论文数: 0 引用数: 0 h-index: 0YOSHIDA, M论文数: 0 引用数: 0 h-index: 0USUI, A论文数: 0 引用数: 0 h-index: 0WATANABE, H论文数: 0 引用数: 0 h-index: 0YUASA, T论文数: 0 引用数: 0 h-index: 0HAYASHI, I论文数: 0 引用数: 0 h-index: 0
- [10] LPE GROWTH OF MISFIT DISLOCATION-FREE THICK IN1-XGAXAS LAYERS ON INP[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) : 1568 - 1572NAKAJIMA, K论文数: 0 引用数: 0 h-index: 0KOMIYA, S论文数: 0 引用数: 0 h-index: 0AKITA, K论文数: 0 引用数: 0 h-index: 0YAMAOKA, T论文数: 0 引用数: 0 h-index: 0RYUZAN, O论文数: 0 引用数: 0 h-index: 0