CONTINUOUS GROWTH OF HIGH-PURITY INP-INGAAS ON INP SUBSTRATE BY VAPOR-PHASE EPITAXY

被引：11

作者：

SUSA, N

YAMAUCHI, Y

KANBE, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 04期

关键词：

D O I：

10.1143/JJAP.20.L253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L253 / L256

页数：4

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