ETCHING CHARACTERISTICS OF DEFECTS IN THE INGAASP-INP LPE LAYERS

被引：13

作者：

KOTANI, T

KOMIYA, S

NAKAI, S

YAMAOKA, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 10期

关键词：

D O I：

10.1149/1.2129391

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：2273 / 2277

页数：5

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共 40 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[2] OBSERVATION OF ETCH PITS PRODUCED IN INP BY NEW ETCHANTS
AKITA, K
KUSUNOKI, T
KOMIYA, S
KOTANI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (06) : 783 - 787
[3] ANTYPAS GA, 1973, GALLIUM ARSENIDE REL, P48
[4] ANTYPAS GA, 1976, I C SER B, V33, P96
[5] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES
BRANTLEY, WA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535
[6] LOCALIZED PLASTIC-DEFORMATION OF GAP AND GAAS GENERATED BY THERMOCOMPRESSION BONDING
BRANTLEY, WA
HARRISON, DA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) : 1281 - 1284
[7] STACKING FAULTS IN VAPOR GROWN SILICON
CHU, TL
GAVALER, JR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 388 - 393
[8] PRELIMINARY STUDY OF DISLOCATIONS IN INDIUM AND GALLIUM PHOSPHIDES
CLARKE, RC
ROBERTSON, DS
VERE, AW
[J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (09) : 1349 - 1354
[9] LIQUID-PHASE EPITAXIAL IN 1-XGAXP1-ZASZ/GAAS1-YPY QUATERNARY (LPE)-TERNARY (VPE) HETEROJUNCTION LASERS (X-0.70, Z-0.01, Y-0.40 - LAMBDA LESS-THAN 6300 A,77 DEGREES K)
COLEMAN, JJ
HITCHENS, WR
HOLONYAK, N
LUDOWISE, MJ
GROVES, WO
KEUNE, DL
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 725 - 727
[10] REDUCED DEGRADATION IN INXGA1-XAS ELECTROLUMINESCENT DIODES
ETTENBERG, M
NUESE, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2137 - 2142

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