INITIAL-STAGE OF EPITAXIAL-GROWTH AT THE HIGH-TEMPERATURE OF GAAS AND ALGAAS ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：14

作者：

SOGA, T ^{[1
]}

GEORGE, T ^{[1
]}

JIMBO, T ^{[1
]}

UMENO, M ^{[1
]}

WEBER, ER ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.104354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs and AlGaAs grown directly on Si were characterized by transmission electron microscopy. Both GaAs and AlGaAs grow three-dimensionally on Si at 750-degrees-C. The spacing between GaAs islands is large, while the AlGaAs islands appear to be contiguous for a nominal thickness of 22.5 nm. There is a high density of dislocations, stacking faults, and microtwins in the thin GaAs layer, but drastic reduction of such defects was observed in the planar AlGaAs nucleation layer.

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页码：1170 / 1172

页数：3

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