THE INTEGRATION OF SIMULATION AND RESPONSE-SURFACE METHODOLOGY FOR THE OPTIMIZATION OF IC PROCESSES

被引:38
作者
GASTON, GJ
WALTON, AJ
机构
[1] UNIV EDINBURGH,DEPT ELECT ENGN,EDINBURGH MICROFABRICAT FACIL,EDINBURGH EH9 3JL,MIDLOTHIAN,SCOTLAND
[2] UNIV EDINBURGH,DEPT ELECT & ELECTR ENGN,EDINBURGH MICROFABRICAT FACIL,EDINBURGH EH9 3JL,MIDLOTHIAN,SCOTLAND
关键词
D O I
10.1109/66.286830
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper describes a methodology that can be used for the optimization of semiconductor processes. This is achieved by integrating the design of experiments and Response Surface Methodology (RSM) with process and device simulation tools. Software for automating multiple simulations has been implemented and interfaced to RS/1 to assist in the manual design and analysis of experiments and the subsequent optimization procedures. The procedure is illustrated through the optimization of part of an MOS process with multi-parameter optimization being performed by the introduction of composite responses and sensitivity analysis. These simulated results are also compared with experimental measurements.
引用
收藏
页码:22 / 33
页数:12
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