PHOSPHORUS VACANCY NEAREST NEIGHBOR HOPPING INDUCED INSTABILITIES IN INP CAPACITORS .2. COMPUTER-SIMULATION

被引：6

作者：

JUANG, MT

WAGER, JF

VANVECHTEN, JA

机构：

[1] Oregon State Univ, Corvallis, OR,, USA, Oregon State Univ, Corvallis, OR, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 08期

关键词：

FLATBAND VOLTAGE SHIFT - NEAREST NEIGHBOR HOPPING - OXIDE TRAPS - THERMIONIC TUNNELING;

D O I：

10.1149/1.2096200

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

(Edited Abstract)

引用

页码：2023 / 2027

页数：5

共 16 条

[1] ANTISITE DEFECTS IN IN1-YGAYAS1-XPX [J].

BUISSON, JP ;

ALLEN, RE ;

DOW, JD .

SOLID STATE COMMUNICATIONS, 1982, 43 (11) :833-836

[2] IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES [J].

CAMRAS, MD ;

HOLONYAK, N ;

HESS, K ;

LUDOWISE, MJ ;

DIETZE, WT ;

LEWIS, CR .

APPLIED PHYSICS LETTERS, 1983, 42 (02) :185-187

[3] DIFFUSION IN COMPOUND SEMICONDUCTORS [J].

GOLDSTEIN, B .

PHYSICAL REVIEW, 1961, 121 (05) :1305-&

[4] PHOSPHORUS VACANCY NEAREST NEIGHBOR HOPPING INDUCED INSTABILITIES IN INP CAPACITORS .1. EXPERIMENTAL [J].

JUANG, MT ;

WAGER, JF ;

VANVECHTEN, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) :2019-2023

[5]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P766

[6]

PRASAD SJ, 1985, THESIS OREGON STATE

[7]

SZE SM, 1981, PHYSICS SEMICONDUCTO, pCH7

[8] PHOTO-LUMINESCENCE STUDY OF NATIVE DEFECTS IN INP [J].

TEMKIN, H ;

DUTT, BV ;

BONNER, WA .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :431-433

[9] POINT-DEFECTS AND DEEP TRAPS IN III-V COMPOUNDS [J].

VANVECHTEN, JA .

CZECHOSLOVAK JOURNAL OF PHYSICS, 1980, 30 (04) :388-394

[10] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J].

VANVECHTEN, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :423-429

← 1 2 →