PHOSPHORUS VACANCY NEAREST NEIGHBOR HOPPING INDUCED INSTABILITIES IN INP CAPACITORS .1. EXPERIMENTAL

被引:13
作者
JUANG, MT
WAGER, JF
VANVECHTEN, JA
机构
关键词
D O I
10.1149/1.2096199
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2019 / 2023
页数:5
相关论文
共 17 条
[1]   DEPTH RESOLUTION OF SPUTTER PROFILING [J].
ANDERSEN, HH .
APPLIED PHYSICS, 1979, 18 (02) :131-140
[2]   ON THE NATURE OF OXIDES ON INP-SURFACES [J].
HOLLINGER, G ;
BERGIGNAT, E ;
JOSEPH, J ;
ROBACH, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2082-2088
[3]   PHOSPHORUS VACANCY NEAREST NEIGHBOR HOPPING INDUCED INSTABILITIES IN INP CAPACITORS .2. COMPUTER-SIMULATION [J].
JUANG, MT ;
WAGER, JF ;
VANVECHTEN, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) :2023-2027
[4]  
JUANG MT, 1987, THESIS OREGON STATE
[5]   A COMBINED HIGH-RESOLUTION ELECTRON-MICROSCOPY, X-RAY PHOTOEMISSION SPECTROSCOPY, AND ELECTRICAL-PROPERTIES STUDY OF THE INP-SIO2 INTERFACE [J].
KRIVANEK, OL ;
LILIENTAL, Z ;
WAGER, JF ;
GAN, RG ;
GOODNICK, SM ;
WILMSEN, CW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1081-1086
[6]   REDUCTION OF THE CONCENTRATION OF SLOW INSULATOR STATES IN SIO2/INP METAL-INSULATOR SEMICONDUCTOR STRUCTURES [J].
KULISCH, W ;
KASSING, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02) :523-529
[7]   THE EFFECT OF INTERFACIAL TRAPS ON THE STABILITY OF INSULATED GATE DEVICES ON INP [J].
LILE, DL ;
TAYLOR, MJ .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :260-267
[8]   SLOW CURRENT-DRIFT MECHANISM IN N-CHANNEL INVERSION TYPE INP-MISFET [J].
OKAMURA, M ;
KOBAYASHI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2143-2150
[9]   CHANNEL MOBILITY ENHANCEMENT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].
PANDE, KP ;
GUTIERREZ, D .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :416-418
[10]  
PRASAD SJ, 1985, THESIS OREGON STATE