PRESSURE-INDUCED SHALLOW-TO-DEEP DONOR-STATE TRANSITION IN SN-119-DOPED GAAS OBSERVED BY MOSSBAUER-SPECTROSCOPY

被引：22

作者：

GIBART, P

WILLIAMSON, DL

MOSER, J

BASMAJI, P

机构：

[1] COLORADO SCH MINES,DEPT PHYS,GOLDEN,CO 80401

[2] BAVARIAN ACAD SCI,WALTHER MEISSNER INST,W-8046 GARCHING,GERMANY

[3] TECH UNIV MUNICH,DEPT PHYS E15,W-8046 GARCHING,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.65.1144

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The Sn DX center in GaAs, a deep donor state of Sn, has been observed by Mössbauer measurements at high pressure. The size of the pressure-induced Sn DX Mössbauer resonance compared to the net conduction-electron concentration at zero pressure provides evidence that the Sn DX center localizes two or three electrons in the ground state. © 1990 The American Physical Society.

引用

页码：1144 / 1147

页数：4

共 29 条

[1] EVIDENCE AGAINST THE NEGATIVE-CHARGE-STATE MODEL FOR THE DX CENTER IN N-TYPE GAAS - REPLY
CHADI, DJ
CHANG, KJ
WALUKIEWICZ, W
[J]. PHYSICAL REVIEW LETTERS, 1989, 62 (16) : 1923 - 1923
[2] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS
CHADI, DJ
CHANG, KJ
[J]. PHYSICAL REVIEW B, 1989, 39 (14): : 10063 - 10074
[3] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS
CHADI, DJ
CHANG, KJ
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (07) : 873 - 876
[4] DIRECT EVIDENCE FOR THE NEGATIVE-U PROPERTY OF THE DX-CENTER AS STUDIED BY HYDROSTATIC-PRESSURE EXPERIMENTS ON GAAS SIMULTANEOUSLY DOPED WITH GE AND SI
FUJISAWA, T
YOSHINO, J
KUKIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (03): : L388 - L390
[5] SN-119 MOSSBAUER STUDY OF SHALLOW AND DEEP STATES OF SN IN GA1-XALXAS
GIBART, P
WILLIAMSON, DL
ELJANI, B
BASMAJI, P
[J]. PHYSICAL REVIEW B, 1988, 38 (03): : 1885 - 1892
[6] GIBART P, 1988, IOP C P, V91, P377
[7] GIBART P, UNPUB
[8] DX CENTERS IN SN-DOPED GA0.7AL0.3AS
HAYES, TM
WILLIAMSON, DL
OUTZOURHIT, A
SMALL, P
GIBART, P
RUDRA, A
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (02) : 207 - 208
[9] Khachaturyan K., 1989, Materials Science Forum, V38-41, P1067, DOI 10.4028/www.scientific.net/MSF.38-41.1067
[10] MAGNETIC STUDIES OF PERSISTENT PHOTOCONDUCTIVITY IN N-ALXGA1-XAS
KHACHATURYAN, KA
AWSCHALOM, DD
ROZEN, JR
WEBER, ER
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (12) : 1311 - 1314

← 1 2 3 →