THE EFFECTS OF POSTDEPOSITION ANNEALING ON ZNS-MN FILM CRYSTALLINE-STRUCTURE AND ELECTROLUMINESCENT CHARACTERISTICS

被引：14

作者：

FUH, A ^{[1
]}

GALLINGER, RP ^{[1
]}

SCHUSTER, P ^{[1
]}

ADOLPH, J ^{[1
]}

CAPORALETTI, O ^{[1
]}

机构：

[1] ORTECH INT,ELECTR DEVICES TECHNOL GRP,MISSISSAUGA L5K 1B3,ONTARIO,CANADA

来源：

THIN SOLID FILMS | 1992年 / 207卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90124-T

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The crystalline structure of ZnS:Mn films, the manganese spatial distribution and the device brightness-voltage characteristics were studied as a function of annealing conditions for both memory and non-memory devices. The results show that, as the annealing temperature is increased, the ZnS films have not only a more uniform manganese concentration distribution but also a better crystalline structure. The threshold voltage necessary for electroluminescence, the saturation brightness and the hysteresis voltage margin (in memory devices) were also controlled by the heat treatment.

引用

页码：202 / 205

页数：4

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