USE OF TRIETHYLINDIUM AND BISPHOSPHINOETHANE FOR THE GROWTH ON INP BY CHEMICAL BEAM EPITAXY

We have demonstrated the first CBE growth of InP using bisphosphinoethane as a group V source. Mirrorlike surface morphology and excellent reflection high-energy electron diffraction patterns were observed. Room temperature and 77 K Hall mobilities for a 2.0 mum thick InP epitaxial layer were 4200 and 22 000 cm 2/V S, with carrier densities of 5.7 X 10(15) and 4.0 X 10(15) cm-3, respectively. Although a high n-type impurity concentration is observed at the epitaxial layer-substrate interface, the epitaxial layer background impurity concentration is low enough for device fabrication. The full width at half maximum linewidth of the dominant donor bound exciton is 0.84 meV.