A NOVEL ATOMIC FORCE MICROSCOPY OBSERVATION TECHNIQUE FOR SECONDARY DEFECTS OF ION-IMPLANTATION, USING ANODIC-OXIDATION

被引：5

作者：

FUJII, S

FUSE, G

HARADA, Y

INOUE, M

机构：

[1] Kyoto Research Laboratory, Matsushita Electronics Corp, Minami-ku, Kyoto, 601

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 2A期

关键词：

ION IMPLANTATION; SECONDARY DEFECT; ANODIC OXIDATION; AFM; TEM; HIGH RESOLUTION;

D O I：

10.1143/JJAP.32.L157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel observation technique for secondary defects of ion implantation has been developed. Stripping of the surface by means of a combination of anodic oxidation and removal of the oxide has been found to expose the buried secondary defects induced by ion implantation. The defects observed by means of atomic force microscopy (AFM) show craterlike forms created by enhanced oxidation around the secondary defects. Detection of the defects with this technique is complementary to conventional transmission electron microscopy (TEM) observation. The technique is a promising method for clarifying the depth distribution of various defects. The technique has also been found to be advantageous for planar TEM observation.

引用

页码：L157 / L159

页数：3

共 6 条

[1] ATOMIC FORCE MICROSCOPE [J].