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THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS
被引:202
作者
:
FEIGL, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FEIGL, FJ
[
1
]
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YOUNG, DR
[
1
]
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
[
1
]
LAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LAI, S
[
1
]
CALISE, J
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
CALISE, J
[
1
]
机构
:
[1]
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
:
JOURNAL OF APPLIED PHYSICS
|
1981年
/ 52卷
/ 09期
关键词
:
D O I
:
10.1063/1.329502
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:5665 / 5682
页数:18
相关论文
共 33 条
[11]
HARTSTEIN A, UNPUBLISHED
[12]
RELATIONSHIP BETWEEN TRAPPED HOLES AND INTERFACE STATES IN MOS CAPACITORS
HU, G
论文数:
0
引用数:
0
h-index:
0
HU, G
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
JOHNSON, WC
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(07)
: 590
-
591
[13]
EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IRENE, EA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
: 1613
-
1616
[14]
JOHNSON WC, 1980, NVL0059012 US ARM EL, P1
[15]
LAI SB, UNPUBLISHED
[16]
2-CARRIER NATURE OF INTERFACE-STATE GENERATION IN HOLE TRAPPING AND RADIATION-DAMAGE
LAI, SK
论文数:
0
引用数:
0
h-index:
0
LAI, SK
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(01)
: 58
-
60
[17]
McGarrity J M, 1978, PHYSICS SIO2 ITS INT, V428
[18]
A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1980,
27
(06)
: 1651
-
1657
[19]
EFFECT OF HOT-ELECTRON INJECTION ON INTERFACE CHARGE-DENSITY AT THE SILICON TO SILICON DIOXIDE INTERFACE
MIURA, Y
论文数:
0
引用数:
0
h-index:
0
MIURA, Y
YAMABE, K
论文数:
0
引用数:
0
h-index:
0
YAMABE, K
KOMIYA, Y
论文数:
0
引用数:
0
h-index:
0
KOMIYA, Y
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
TARUI, Y
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(01)
: 191
-
194
[20]
ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS
NICOLLIA.EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIA.EH
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
SCHMIDT, PF
论文数:
0
引用数:
0
h-index:
0
SCHMIDT, PF
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, JM
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(13)
: 5654
-
&
←
1
2
3
4
→
共 33 条
[11]
HARTSTEIN A, UNPUBLISHED
[12]
RELATIONSHIP BETWEEN TRAPPED HOLES AND INTERFACE STATES IN MOS CAPACITORS
HU, G
论文数:
0
引用数:
0
h-index:
0
HU, G
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
JOHNSON, WC
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(07)
: 590
-
591
[13]
EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IRENE, EA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
: 1613
-
1616
[14]
JOHNSON WC, 1980, NVL0059012 US ARM EL, P1
[15]
LAI SB, UNPUBLISHED
[16]
2-CARRIER NATURE OF INTERFACE-STATE GENERATION IN HOLE TRAPPING AND RADIATION-DAMAGE
LAI, SK
论文数:
0
引用数:
0
h-index:
0
LAI, SK
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(01)
: 58
-
60
[17]
McGarrity J M, 1978, PHYSICS SIO2 ITS INT, V428
[18]
A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1980,
27
(06)
: 1651
-
1657
[19]
EFFECT OF HOT-ELECTRON INJECTION ON INTERFACE CHARGE-DENSITY AT THE SILICON TO SILICON DIOXIDE INTERFACE
MIURA, Y
论文数:
0
引用数:
0
h-index:
0
MIURA, Y
YAMABE, K
论文数:
0
引用数:
0
h-index:
0
YAMABE, K
KOMIYA, Y
论文数:
0
引用数:
0
h-index:
0
KOMIYA, Y
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
TARUI, Y
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(01)
: 191
-
194
[20]
ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS
NICOLLIA.EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIA.EH
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
SCHMIDT, PF
论文数:
0
引用数:
0
h-index:
0
SCHMIDT, PF
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, JM
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(13)
: 5654
-
&
←
1
2
3
4
→