ELECTRICAL CROSSTALK IN P-I-N ARRAYS .1. THEORY

被引：12

作者：

KAPLAN, DR ^{[1
]}

FORREST, SR ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT ELECT ENGN ELECTROPHYS,LOS ANGELES,CA 90007

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1986年 / 4卷 / 10期

关键词：

D O I：

10.1109/JLT.1986.1074653

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1460 / 1469

页数：10

共 18 条

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[5]

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[6] LOW DARK-CURRENT, HIGH-EFFICIENCY PLANAR IN0.53 GA0.47 AS-INP P-I-N PHOTO-DIODES [J].

FORREST, SR ;

CAMLIBEL, I ;

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[7] PERFORMANCE OF INXGA1-XASYP1-Y PHOTO-DIODES WITH DARK CURRENT LIMITED BY DIFFUSION, GENERATION RECOMBINATION, AND TUNNELING [J].

FORREST, SR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :217-226

[8]

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[9]

KAPLAN DR, UNPUB ELECTRICAL CRO

[10]

MORRIS BL, 1974, NBS40010 SPEC PUBL, P63

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