ELECTRICAL-PROPERTIES OF NORMAL-TYPE SEMICONDUCTING CHALCOGENIDE GLASSES IN THE SYSTEM PB-GE-SE

被引:124
作者
TOHGE, N
MATSUO, H
MINAMI, T
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D O I
10.1016/S0022-3093(87)80685-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:809 / 816
页数:8
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共 17 条
[1]   PHOTOELECTRIC PROPERTIES OF AS2SE3 MODIFIED WITH TRANSITION (NI) AND NONTRANSITION (BI) METALS [J].
ABDULGAFAROV, SE ;
AVERYANOV, VL ;
KOLOMIETS, BT ;
LYUBIN, VM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) :449-452
[2]   BISMUTH-DOPED AMORPHOUS-GERMANIUM SULFIDE SEMICONDUCTORS [J].
BHATIA, KL ;
GOSAIN, DP ;
PARTHASARATHY, G ;
GOPAL, ESR .
PHYSICAL REVIEW B, 1986, 34 (12) :8786-8793
[3]   GLASS FORMATION AND PROPERTIES OF CHALCOGENIDE SYSTEMS .16. LEADSELENOGERMANATE GLASSES AND THEIR PROPERTIES [J].
FELTZ, A ;
SENF, L .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1978, 444 (SEP) :195-210
[4]   VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].
KASTNER, M ;
ADLER, D ;
FRITZSCHE, H .
PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507
[5]   CORRELATIONS BETWEEN PROPERTIES OF CHALCOGENIDE GLASSES .5. GLASS FORMATION AND PHASE SEPARATION IN SYSTEMS TL-GE-SE AND PB-GE-SE [J].
LINKE, D ;
GITTER, M ;
KRUG, F .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1978, 444 (SEP) :217-236
[6]   ELECTRICAL AND OPTICAL-PROPERTIES OF GE20SB15-XBIXBI65 GLASSES [J].
MALEK, J ;
KLIKORKA, J ;
BENES, L ;
TICHY, L ;
TRISKA, A .
JOURNAL OF MATERIALS SCIENCE, 1986, 21 (02) :488-492
[7]   STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].
MOTT, NF ;
DAVIS, EA ;
STREET, RA .
PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996
[8]   DOPING OF CHALCOGENIDE GLASSES IN THE GE-SE AND GE-TE SYSTEMS [J].
NAGELS, P ;
ROTTI, M ;
VIKHROV, S .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :907-910
[9]  
ROWLAND SC, 1977, AMORPHOUS LIQUID SEM, P135
[10]   PREPARATION OF N-TYPE SEMICONDUCTING GE20BI10SE70 GLASS [J].
TOHGE, N ;
YAMAMOTO, Y ;
MINAMI, T ;
TANAKA, M .
APPLIED PHYSICS LETTERS, 1979, 34 (10) :640-641