BISMUTH-DOPED AMORPHOUS-GERMANIUM SULFIDE SEMICONDUCTORS

被引：34

作者：

BHATIA, KL ^{[1
]}

GOSAIN, DP ^{[1
]}

PARTHASARATHY, G ^{[1
]}

GOPAL, ESR ^{[1
]}

机构：

[1] INDIAN INST SCI,INSTRUMENTAT & SERV UNIT,BANGALORE 560012,KARNATAKA,INDIA

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.34.8786

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8786 / 8793

页数：8

共 25 条

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