EFFECT OF PRESSURE ON BAND EXTREMA OF COVALENT SEMICONDUCTORS

被引：12

作者：

COSTATO, M

REGGIANI, L

机构：

来源：

LETTERE AL NUOVO CIMENTO | 1970年 / 4卷 / 18期

关键词：

D O I：

10.1007/BF02755164

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：848 / &

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