EFFECT OF PRESSURE ON BAND EXTREMA OF COVALENT SEMICONDUCTORS

[21] PIEZOTRANSMISSION MEASUREMENTS OF PHONON-ASSISTED TRANSITIONS IN SEMICONDUCTORS .I. GERMANIUM [J]. PHYSICAL REVIEW, 1967, 155 (03): : 693 - &

[22] EFFECT OF STRAIN ON EXCITON SPECTRUM OF GERMANIUM [J]. CANADIAN JOURNAL OF PHYSICS, 1965, 43 (01) : 12 - &

[23] GOROFF I, 1963, PHYS REV, V132, P1080

[24] LARGE-STRAIN DEPENDENCE OF ACCEPTOR BINDING ENERGY IN GERMANIUM [J]. PHYSICAL REVIEW, 1962, 128 (01): : 68 - &

[25] SOME EFFECTS OF MECHANICAL STRESS ON BREAKDOWN VOLTAGE OF P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3884 - &

[26] GALVANOMAGNETIC EFFECTS OF HOT ELECTRONS IN N-TYPE SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (05) : 927 - +

[27] QUANTUM EFFECTS IN CYCLOTRON RESONANCE OF HOLES IN UNIAXIALLY STRESSED GERMANIUM [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (05) : 231 - &

[28] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &

[29] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1041 - &

[30] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290

[21] PIEZOTRANSMISSION MEASUREMENTS OF PHONON-ASSISTED TRANSITIONS IN SEMICONDUCTORS .I. GERMANIUM [J]. PHYSICAL REVIEW, 1967, 155 (03): : 693 - &

[22] EFFECT OF STRAIN ON EXCITON SPECTRUM OF GERMANIUM [J]. CANADIAN JOURNAL OF PHYSICS, 1965, 43 (01) : 12 - &

[23] GOROFF I, 1963, PHYS REV, V132, P1080

[24] LARGE-STRAIN DEPENDENCE OF ACCEPTOR BINDING ENERGY IN GERMANIUM [J]. PHYSICAL REVIEW, 1962, 128 (01): : 68 - &

[25] SOME EFFECTS OF MECHANICAL STRESS ON BREAKDOWN VOLTAGE OF P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3884 - &

[26] GALVANOMAGNETIC EFFECTS OF HOT ELECTRONS IN N-TYPE SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (05) : 927 - +

[27] QUANTUM EFFECTS IN CYCLOTRON RESONANCE OF HOLES IN UNIAXIALLY STRESSED GERMANIUM [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (05) : 231 - &

[28] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &

[29] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1041 - &

[30] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290