ELASTIC STRAINS IN CDTE-GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：52

作者：

OLEGO, DJ ^{[1
]}

PETRUZZELLO, J ^{[1
]}

GHANDHI, SK ^{[1
]}

TASKAR, NR ^{[1
]}

BHAT, IB ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12181

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 02期

关键词：

D O I：

10.1063/1.98590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：127 / 129

页数：3

共 13 条

[1] STRESS DEPENDENCE OF PHOTOLUMINESCENCE IN GAAS
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[2] Bir GL., 1974, SYMMETRY STRAIN INDU
[3] DEFORMATION POTENTIALS OF K = 0 STATES OF TETRAHEDRAL SEMICONDUCTORS
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[4] GROWTH OF CDTE ON GAAS BY ORGANOMETALLIC VAPOR-PHASE HETEROEPITAXY
GHANDHI, SK
TASKAR, NR
BHAT, IB
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 742 - 745
[5] SILICON STRAINED LAYERS GROWN ON GAP(001) BY MOLECULAR-BEAM EPITAXY
MAREE, PMJ
OLTHOF, RIJ
FRENKEN, JWM
VANDERVEEN, JF
BULLELIEUWMA, CWT
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : 3097 - 3103
[6] MATTHEWS JW, 1975, EPITAXIAL GROWTH B, P559
[7] EFFECT OF LATTICE MISMATCH IN ZNSE EPILAYERS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY
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PETRUZELLO, J
BHARGAVA, RN
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 37 - 39
[8] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES
PEOPLE, R
BEAN, JC
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 322 - 324
[9] TRANSMISSION ELECTRON-MICROSCOPY OF (001) CDTE ON (001) GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
PETRUZZELLO, J
OLEGO, D
GHANDHI, SK
TASKAR, NR
BHAT, I
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1423 - 1425
[10] MODULATION SPECTROSCOPY UNDER UNIAXIAL STRESS
POLLAK, FH
[J]. SURFACE SCIENCE, 1973, 37 (01) : 863 - 895

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