LOW-TEMPERATURE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED PSEUDOMORPHIC N-ALGAAS/GALNAS/GAAS STRUCTURES

被引：19

作者：

OHNO, H

LUO, JK

MATSUZAKI, K

HASEGAWA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.100826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：36 / 38

页数：3

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