NON-EQUILIBRIUM ROUGHENING TRANSITIONS

[1] MONTE-CARLO SIMULATIONS OF SI(001) GROWTH AND RECONSTRUCTION DURING MOLECULAR-BEAM EPITAXY [J]. SURFACE SCIENCE, 1988, 198 (1-2) : 133 - 150

[2] INTERFACE MOTION AND NONEQUILIBRIUM PROPERTIES OF THE RANDOM-FIELD ISING-MODEL [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (17) : 1547 - 1550

[3] CHASON E, 1989, J VAC SCI TECHNOL B, V7

[4] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (21) : 2235 - 2238

[5] ATOMISTIC NUMERICAL-SIMULATION OF EPITAXIAL CRYSTAL-GROWTH [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1179 - 1183

[6] THE SURFACE STATISTICS OF A GRANULAR AGGREGATE [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1982, 381 (1780): : 17 - 31

[7] FLYNN DK, 1988, PREPRINT

[8] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546

[9] SIMULATION-MODELS OF THE CRYSTAL VAPOR INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 298 - 304

[10] PAIR APPROXIMATION FOR INTERFACE KINETICS [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 495 - 498

[1] MONTE-CARLO SIMULATIONS OF SI(001) GROWTH AND RECONSTRUCTION DURING MOLECULAR-BEAM EPITAXY [J]. SURFACE SCIENCE, 1988, 198 (1-2) : 133 - 150

[2] INTERFACE MOTION AND NONEQUILIBRIUM PROPERTIES OF THE RANDOM-FIELD ISING-MODEL [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (17) : 1547 - 1550

[3] CHASON E, 1989, J VAC SCI TECHNOL B, V7

[4] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (21) : 2235 - 2238

[5] ATOMISTIC NUMERICAL-SIMULATION OF EPITAXIAL CRYSTAL-GROWTH [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1179 - 1183

[6] THE SURFACE STATISTICS OF A GRANULAR AGGREGATE [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1982, 381 (1780): : 17 - 31

[7] FLYNN DK, 1988, PREPRINT

[8] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546

[9] SIMULATION-MODELS OF THE CRYSTAL VAPOR INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 298 - 304

[10] PAIR APPROXIMATION FOR INTERFACE KINETICS [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 495 - 498