PROPERTIES AND APPLICATIONS OF ION-IMPLANTED FILMS

[11] REACTIVE ION-BOMBARDMENT OF TANTALUM THIN-FILM RESISTORS [J]. THIN SOLID FILMS, 1973, 17 (01) : 59 - 66

[12] ION-IMPLANTATION DOPING OF COMPOUND SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (01): : 9 - 42

[13] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 219 - 225

[14] DUCKWORTH RG, 1977, U SURREY INT REP

[15] FORMATION OF THIN SIO2-FILMS BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON AND THEIR INVESTIGATION BY IR TECHNIQUES [J]. THIN SOLID FILMS, 1976, 35 (03) : 327 - 336

[16] FORMATION OF SIC AND SI-3N-4 IN SILICON BY ION-IMPLANTATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 13 - 15

[17] EDURIN RP, 1973, J PHYS D, V6, P223

[18] Theory of the adsorption and related occurrences [J]. ZEITSCHRIFT FUR PHYSIK, 1924, 26 : 117 - 138

[19] GERASIMENKO NN, 1974, SOV PHYS SEMICOND+, V7, P1461

[20] MOS MEASUREMENT OF OXYGEN RECOILS FROM AS IMPLANTATION INTO SILICON DIOXIDE [J]. APPLIED PHYSICS LETTERS, 1976, 29 (04) : 259 - 261

[11] REACTIVE ION-BOMBARDMENT OF TANTALUM THIN-FILM RESISTORS [J]. THIN SOLID FILMS, 1973, 17 (01) : 59 - 66

[12] ION-IMPLANTATION DOPING OF COMPOUND SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (01): : 9 - 42

[13] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 219 - 225

[14] DUCKWORTH RG, 1977, U SURREY INT REP

[15] FORMATION OF THIN SIO2-FILMS BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON AND THEIR INVESTIGATION BY IR TECHNIQUES [J]. THIN SOLID FILMS, 1976, 35 (03) : 327 - 336

[16] FORMATION OF SIC AND SI-3N-4 IN SILICON BY ION-IMPLANTATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 13 - 15

[17] EDURIN RP, 1973, J PHYS D, V6, P223

[18] Theory of the adsorption and related occurrences [J]. ZEITSCHRIFT FUR PHYSIK, 1924, 26 : 117 - 138

[19] GERASIMENKO NN, 1974, SOV PHYS SEMICOND+, V7, P1461

[20] MOS MEASUREMENT OF OXYGEN RECOILS FROM AS IMPLANTATION INTO SILICON DIOXIDE [J]. APPLIED PHYSICS LETTERS, 1976, 29 (04) : 259 - 261