ION-IMPLANTATION DOPING OF COMPOUND SEMICONDUCTORS

[1] ALLEN RM, 1970, 1970 P EUR C ION IMP, P127

[2] Anderson W. W., 1968, SOLID STATE ELECTRON, V11, P481

[3] ANDERSON WW, 1968, APPL PHYS LETTERS, V12, P339

[4] ARNOLD GW, 1972, 2 P INT C ION IMPL S

[5] AVEN M, 1967, PHYSICS CHEMISTRY 2

[6] CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (01) : 13 - +

[7] HIGH-TEMPERATURE BEHAVIOR OF GAAS JUNCTIONS PREPARED BY DIFFERENT TECHNIQUES [J]. SOLID-STATE ELECTRONICS, 1971, 14 (03) : 191 - &

[8] FORMATION OF SIC IN SILICON BY ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1971, 18 (11) : 509 - &

[9] DEEP (1-10 MU) PENETRATION OF ION-IMPLANTED DONORS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1966, 9 (05) : 203 - &

[10] BOWER RW, 1966, P INT M ELECTRON DEV

[1] ALLEN RM, 1970, 1970 P EUR C ION IMP, P127

[2] Anderson W. W., 1968, SOLID STATE ELECTRON, V11, P481

[3] ANDERSON WW, 1968, APPL PHYS LETTERS, V12, P339

[4] ARNOLD GW, 1972, 2 P INT C ION IMPL S

[5] AVEN M, 1967, PHYSICS CHEMISTRY 2

[6] CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (01) : 13 - +

[7] HIGH-TEMPERATURE BEHAVIOR OF GAAS JUNCTIONS PREPARED BY DIFFERENT TECHNIQUES [J]. SOLID-STATE ELECTRONICS, 1971, 14 (03) : 191 - &

[8] FORMATION OF SIC IN SILICON BY ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1971, 18 (11) : 509 - &

[9] DEEP (1-10 MU) PENETRATION OF ION-IMPLANTED DONORS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1966, 9 (05) : 203 - &

[10] BOWER RW, 1966, P INT M ELECTRON DEV