ION-IMPLANTATION DOPING OF COMPOUND SEMICONDUCTORS

[51] ITOH T, 1972, 2 P INT C ION IMPL S

[52] STATISTICAL RANGE DISTRIBUTION OF IONS IN SINGLE AND MULTIPLE ELEMENT SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 321 - &

[53] KACHURIN GA, 1969, SOV PHYS SEMICOND+, V2, P1527

[54] PHOTOLUMINESCENCE IN GAP RESULTING FROM NITROGEN ION-IMPLANTATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 5 (03): : K205 - &

[55] CATHODOLUMINESCENCE OF OXYGEN-IMPLANTED ZINC-DOPED GALLIUM PHOSPHIDE [J]. ELECTRONICS LETTERS, 1969, 5 (10) : 203 - &

[56] LANG E, 1972, 2 P INT C ION IMPL S

[57] LANGGUTH G, 1972, 2 P INT C ION IMPL S

[58] ION IMPLANTATION - A NEW METHOD OF DOPING SEMICONDUCTORS .2. [J]. CONTEMPORARY PHYSICS, 1969, 10 (05) : 505 - &

[59] ION IMPLANTATION - A NEW METHOD OF DOPING SEMICONDUCTORS .I. [J]. CONTEMPORARY PHYSICS, 1969, 10 (03) : 277 - &

[60] LINDHARD J, 1963, K DANSKE VID SEL MFM, V33

[51] ITOH T, 1972, 2 P INT C ION IMPL S

[52] STATISTICAL RANGE DISTRIBUTION OF IONS IN SINGLE AND MULTIPLE ELEMENT SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 321 - &

[53] KACHURIN GA, 1969, SOV PHYS SEMICOND+, V2, P1527

[54] PHOTOLUMINESCENCE IN GAP RESULTING FROM NITROGEN ION-IMPLANTATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 5 (03): : K205 - &

[55] CATHODOLUMINESCENCE OF OXYGEN-IMPLANTED ZINC-DOPED GALLIUM PHOSPHIDE [J]. ELECTRONICS LETTERS, 1969, 5 (10) : 203 - &

[56] LANG E, 1972, 2 P INT C ION IMPL S

[57] LANGGUTH G, 1972, 2 P INT C ION IMPL S

[58] ION IMPLANTATION - A NEW METHOD OF DOPING SEMICONDUCTORS .2. [J]. CONTEMPORARY PHYSICS, 1969, 10 (05) : 505 - &

[59] ION IMPLANTATION - A NEW METHOD OF DOPING SEMICONDUCTORS .I. [J]. CONTEMPORARY PHYSICS, 1969, 10 (03) : 277 - &

[60] LINDHARD J, 1963, K DANSKE VID SEL MFM, V33