ION-IMPLANTATION DOPING OF COMPOUND SEMICONDUCTORS

[21] ION-IMPLANTATION INDUCED OPTICAL ABSORPTION EDGE SHIFTS IN GAP [J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 323 - &

[22] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 587 - +

[23] ION BOMBARDMENT AND IMPLANTATION [J]. REPORTS ON PROGRESS IN PHYSICS, 1969, 32 (04) : 405 - +

[24] DEARNALEY G, 1970, 1969 P INT C AT COLL

[25] DEARNALEY G, 1970, 1970 P EUR C ION IMP, P162

[26] TYPE CONVERSION AND P-N JUNCTIONS IN N-CDTE PRODUCED BY ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 303 - &

[27] MIS ELECTROLUMINESCENT DIODES IN ZNTE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 755 - &

[28] DUNLAP HL, 1969, NAS12124 HUGH RES LA

[29] ELDRIDGE G, 1970, 1970 P EUR C ION IMP, P143

[30] THE DIFFUSION OF TIN AND SELENIUM IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1963, 6 (04) : 383 - 387

[21] ION-IMPLANTATION INDUCED OPTICAL ABSORPTION EDGE SHIFTS IN GAP [J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 323 - &

[22] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 587 - +

[23] ION BOMBARDMENT AND IMPLANTATION [J]. REPORTS ON PROGRESS IN PHYSICS, 1969, 32 (04) : 405 - +

[24] DEARNALEY G, 1970, 1969 P INT C AT COLL

[25] DEARNALEY G, 1970, 1970 P EUR C ION IMP, P162

[26] TYPE CONVERSION AND P-N JUNCTIONS IN N-CDTE PRODUCED BY ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 303 - &

[27] MIS ELECTROLUMINESCENT DIODES IN ZNTE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 755 - &

[28] DUNLAP HL, 1969, NAS12124 HUGH RES LA

[29] ELDRIDGE G, 1970, 1970 P EUR C ION IMP, P143

[30] THE DIFFUSION OF TIN AND SELENIUM IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1963, 6 (04) : 383 - 387