MONTE-CARLO CALCULATION OF DRIFT VELOCITY OF ELECTRONS AND HOLES IN HIGH ELECTRIC-FIELDS IN SILICON MOSFETS

被引：4

作者：

BASU, PK

机构：

来源：

SURFACE SCIENCE | 1978年 / 73卷 / 01期

关键词：

D O I：

10.1016/0039-6028(78)90483-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：156 / 159

页数：4

共 10 条

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[7] DRIFT-VELOCITY SATURATION OF HOLES IN SI INVERSION LAYERS [J].

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[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

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[10]

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