REALIZATION OF A QUASI-3-DIMENSIONAL MODULATION-DOPED SEMICONDUCTOR STRUCTURE

[1] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1826 - 1828

[2] POSSIBLE STATES FOR A 3-DIMENSIONAL ELECTRON-GAS IN A STRONG MAGNETIC-FIELD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 : 1913 - 1919

[3] MAGNETOCONDUCTANCE OSCILLATIONS OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS IN A PARABOLIC TRANSVERSE POTENTIAL [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 1346 - 1348

[4] STRONG-MAGNETIC-FIELD STATES OF THE PURE ELECTRON-PLASMA [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (05) : 515 - 518

[5] LIGHT-SCATTERING DETERMINATION OF BAND OFFSETS IN GAAS-ALXGA1-XAS QUANTUM-WELLS [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8863 - 8866

[6] DELTA-(DELTA-) DOPING IN MBE-GROWN GAAS - CONCEPT AND DEVICE APPLICATION [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 304 - 313

[7] GROWTH OF LOW-DENSITY TWO-DIMENSIONAL ELECTRON-SYSTEM WITH VERY HIGH MOBILITY BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (13) : 1086 - 1088

[8] THE FRACTIONAL QUANTUM HALL-EFFECT [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1711 - 1719

[9] Weimann G., 1986, ADV SOLID STATE PHYS, V26, P231

[10] OSCILLATORY MAGNETORESISTANCE OF GAAS/GAALAS QUANTUM WELL STRUCTURES UNDER PARALLEL MAGNETIC-FIELDS [J]. SURFACE SCIENCE, 1984, 142 (1-3) : 326 - 331

[1] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1826 - 1828

[2] POSSIBLE STATES FOR A 3-DIMENSIONAL ELECTRON-GAS IN A STRONG MAGNETIC-FIELD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 : 1913 - 1919

[3] MAGNETOCONDUCTANCE OSCILLATIONS OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS IN A PARABOLIC TRANSVERSE POTENTIAL [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 1346 - 1348

[4] STRONG-MAGNETIC-FIELD STATES OF THE PURE ELECTRON-PLASMA [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (05) : 515 - 518

[5] LIGHT-SCATTERING DETERMINATION OF BAND OFFSETS IN GAAS-ALXGA1-XAS QUANTUM-WELLS [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8863 - 8866

[6] DELTA-(DELTA-) DOPING IN MBE-GROWN GAAS - CONCEPT AND DEVICE APPLICATION [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 304 - 313

[7] GROWTH OF LOW-DENSITY TWO-DIMENSIONAL ELECTRON-SYSTEM WITH VERY HIGH MOBILITY BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (13) : 1086 - 1088

[8] THE FRACTIONAL QUANTUM HALL-EFFECT [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1711 - 1719

[9] Weimann G., 1986, ADV SOLID STATE PHYS, V26, P231

[10] OSCILLATORY MAGNETORESISTANCE OF GAAS/GAALAS QUANTUM WELL STRUCTURES UNDER PARALLEL MAGNETIC-FIELDS [J]. SURFACE SCIENCE, 1984, 142 (1-3) : 326 - 331