PHOTOACOUSTIC CHARACTERIZATION OF CW ARGON-ION LASER IRRADIATION OF GE

被引：8

作者：

MCCLELLAND, JF

KNISELEY, RN

机构：

[1] Ames Laboratory USDOE, Iowa State University, Ames

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 02期

关键词：

D O I：

10.1063/1.91043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoacoustic detection has been used to characterize cw argon-ion laser irradiation of Ge. Laser-induced heating, damage, and melting are studied. The heating process is seen to be nonlinear with incident laser power until close to melting. Two laser-induced-damage time constants are obtained associated with thermal etching and oxidation. An incident power level of 2.24 W is estimated to initiate the melting of an undamaged Ge surface under the experimental conditions described.

引用

页码：121 / 124

页数：4

共 13 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].