RADICAL-ASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF ZNSE

被引：12

作者：

MIKAMI, M ^{[1
]}

PARK, KS ^{[1
]}

NODA, Y ^{[1
]}

FURUKAWA, Y ^{[1
]}

机构：

[1] TOHOKU UNIV,FAC ENGN,DEPT MAT SCI,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 140卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(94)90320-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Radical-assisted metalorganic chemical vapor deposition (MOCVD) of ZnSe has been performed by using diethylzinc (DEZn) and diethylselenide (DESe) as a source and azo-t-butane ((t-C4H9)2N2) and nitrogen trifluoride (NF3) as co-reactants. The growth rate was significantly increased in the measured temperature range of 623 to 723 K.

引用

页码：429 / 431

页数：3

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