ELECTRIC-FIELD-ENHANCED PERSISTENT PHOTOCONDUCTIVITY IN A ZN0.02CD0.98TE SEMICONDUCTOR ALLOY

被引：15

作者：

LIN, JY ^{[1
]}

DISSANAYAKE, A ^{[1
]}

JIANG, HX ^{[1
]}

机构：

[1] KANSAS STATE UNIV AGR & APPL SCI,DEPT PHYS,MANHATTAN,KS 66506

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.46.3810

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Persisent Photoconductivity (PPC) has been investigated in a Zn0.02Cd0.08Te semiconductor alloy. A transition from a photoconductivity phase to a PPC phase has been observed and a coexistence curve that separates these two phases has been obtained. We find that such a transition can be controlled by the bias voltage and excitation photon dose. The relaxation of PPC is found to follow a power law, I(PPC) (t) is-proportional-to t(-alpha). The decay parameter a is obtained as a function of the bias voltage, which shows that the carrier decay rate decreases almost linearly with increasing bias voltage in the PPC phase. A possible mechanism is the presence of random local-potential fluctuations in the sample, which strongly influence the carrier transport properties. The fluctuations could be induced either by alloy disorder or impurity compensation.

引用

页码：3810 / 3816

页数：7

共 31 条

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